N-Channel MOSFET, 45 A, 60 V, 3-Pin DPAK Infineon IPD053N06NATMA1
- RS Stock No.:
- 9064491
- Mfr. Prt No.:
- IPD053N06NATMA1
- Brand:
- Infineon
Legislation and Compliance
RoHS Status: Not Applicable
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
| RS stock number | 9064491 |
| Product description | N-Channel MOSFET, 45 A, 60 V, 3-Pin DPAK Infineon IPD053N06NATMA1 |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | IPD053N06NATMA1 |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
| Date | Nov 10, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Infineon OptiMOS™5 Power MOSFETs
Specifications
| Attribute | Value |
| Brand | Infineon |
| Maximum Power Dissipation | 83 W |
| Number of Elements per Chip | 1 |
| Series | OptiMOS 5 |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Drain Source Resistance | 8 mΩ |
| Mounting Type | Surface Mount |
| Transistor Configuration | Single |
| Forward Diode Voltage | 1.2 V |
| Package Type | DPAK (TO-252) |
| Maximum Operating Temperature | +175 °C |
| Length | 6.73 mm |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V |
| Channel Type | N |
| Height | 2.41 mm |
| Width | 6.22 mm |
| Channel Mode | Enhancement |
| Pin Count | 3 |
| Maximum Drain Source Voltage | 60 V |
| Transistor Material | Si |
| Maximum Continuous Drain Current | 45 A |
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