OSI Optoelectronics, PIN-UV-100DQC UV Si Photodiode, Through Hole Ceramic
- RS Stock No.:
- 8486294
- Mfr. Prt No.:
- PIN-UV-100DQC
- Brand:
- OSI Optoelectronics
Legislation and Compliance
RoHS Certificate of Compliance
EU Directives 2011/65/EU and 2015/863 restrict the use of the 10 substances below in the manufacture of specified types of electrical equipment.
Whilst this restriction does not legally apply to components, it is recognised that component “compliance” is relevant to many customers.
RS definition of RoHS Compliance:
- The product does not contain any of the restricted substances in concentrations and applications banned by the Directive,
- and for components, the product is capable of being worked on at the higher temperatures required by lead–free soldering
The restricted substances and maximum allowed concentrations in the homogenous material are, by weight:
Substance | Concentration |
Lead | 0.1% |
Mercury | 0.1% |
PBB (Polybrominated Biphenyls) | 0.1% |
PBDE ( Polybrominated Diphenyl Ethers) | 0.1% |
Hexavalent Chromium | 0.1% |
Cadmium | 0.01% |
DEHP (Bis (2-Ethylhexl) phthalate) | 0.1% |
BBP (Benzyl butyl phthalate) | 0.1% |
DBP (Dibutyl phthalate) | 0.1% |
DIBP (Diisobutyl phthalate) | 0.1% |
The supplier of the item listed below has informed RS Components that the product is "RoHS Compliant".
RS Components has taken all reasonable steps to confirm this statement. Information relates only to products sold on or after the date of this certificate.
RS stock number | 8486294 |
Product description | OSI Optoelectronics, PIN-UV-100DQC UV Si Photodiode, Through Hole Ceramic |
Manufacturer / Brand | OSI Optoelectronics |
Manufacturer part number | PIN-UV-100DQC |
RS Components Ltd, Birchington Road, Corby, Northants, NN17 9RS, UK
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
RS stock number | 8486294 |
Product description | OSI Optoelectronics, PIN-UV-100DQC UV Si Photodiode, Through Hole Ceramic |
Manufacturer / Brand | OSI Optoelectronics |
Manufacturer part number | PIN-UV-100DQC |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
Date | Nov 13, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Country of Origin: US
Product Details
Photodiodes, OSI Optoelectronics
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Specifications
Attribute | Value |
Brand | OSI Optoelectronics |
Spectrums Detected | Ultraviolet |
Wavelength of Peak Sensitivity | 980 nm |
Package Type | Ceramic |
Mounting Type | Through Hole |
Number of Pins | 2 |
Diode Material | Si |
Minimum Wavelength Detected | 190 nm |
Maximum Wavelength Detected | 1100 nm |
Length | 16.51 mm |
Width | 14.99 mm |
Height | 2.03 mm |
Peak Photo Sensitivity | 0.5 A/W |
Polarity | Reverse |